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  2002. 10. 23 1/4 semiconductor technical data KTA1204D/l epitaxial planar pnp transistor revision no : 1 high current switching application. application relay drivers, high-speed inverters, converters, and other general high-current switching applications. features low collector emitter saturation voltage. : v ce(sat) =-0.4v(max.) (i c =-4a) high current and high f t : i c =-8a, f t =130mhz. excellent linearity of h fe high speed switching time. : f t =20ns (typ.) complementary to ktc1804d/l maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltag v ebo -6 v collector current dc i c -8 a pulse i cp -12 collector power dissipation ta=25 p c 1.3 w ta=25 20 junction temperature t j 150 storage temperature range t stg -55 150 dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/4 KTA1204D/l revision no : 1 electrical characteristics (ta=25 ) note : h fe classification o:100~200, y:140~280, gr:200~400. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-40v, i e =0 - - -1 a emitter cut-off current i ebo v eb =-4v, i c =0 - - -1 a dc current gain h fe (1) (note) v ce =-2v, i c =-0.5a 100 - 400 h fe (2) v ce =-2v, i c =-6a 35 - - collector-emitter saturation voltage v ce(sat) i c =-4a, i b =-0.2a - -250 -500 mv base-emitter saturation voltage v be(sat) i c =-4a, i b =-0.2a - -0.95 -1.3 mv collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, r be = -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -6 - - v gain-bandwidth product f t v ce =-5v, i c =-1a - 130 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 95 - pf switching time turn on time t on i b1 6.25? b1 i cc v =-25v i b2 i b2 20 sec -i =i =0.4a 1% b1 b2 output duty cycle input 0 < = - 50 - ns storage time t stg - 450 - fall time t f - 20 -
2002. 10. 23 3/4 KTA1204D/l revision no : 1 c collector current i (a) 0 0 collector-emitter voltage v (v) ce ce c i - v -0.4 -0.8 -1.2 -1.6 -2.0 -2 -4 -6 -8 -10 -60ma -80ma -100ma -120ma -140ma -160ma -40ma -20ma -10ma i =0ma b c collector current i (a) 0 0 base-emitter voltage v (v) be be c i - v -0.2 -0.4 -0.6 -1.2 -0.8 -1.0 -1 -2 -3 -4 -5 -7 -6 -8 c collector current i (a) 0 0 collector-emitter voltage v (v) ce ce c i - v -2 -4 -6 -8 -10 -1 -2 -3 -4 -5 -20ma -25ma -30ma -15ma -10ma -5ma i =0ma b dc current gain h fe collector current i (ma) c h - i fe c 10 30 50 100 300 500 1k ta=-25 c v =-2v ce v =-2v ce v =-5v ce ta=75 c ta=25 c ta=75 c ta=25 c ta=-25 c collector output capacitance ob -1 collector-base voltage v (v) cb c - v ob cb c (pf) -3 -5 -10 -30 -50 -100 f=1mhz -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20 f - i c collector current i (ma) t transition frequency f (mhz) tc 10 30 50 100 300 500 10 30 50 100 300 500 -0.02 -0.05 -0.1 -0.3 -0.5 -1 -3 -5
2002. 10. 23 4/4 KTA1204D/l revision no : 1 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta -10 voltage v (mv) ce(sat) -0.3 -0.1 -0.03 -0.01 collector current i (a) c v - i ce(sat) c v - i be(sat) c collector-emitter saturation voltage v (v) be(sat) base-emitter saturation -1 -3 -10 -3 -1 -0.3 -0.1 -10 -30 -100 -30 -50 -100 -300 -500 -1k i /i =20 cb i /i =20 c b ta=75 c ta=25 c ta=-25 c p (w) 40 80 120 160 20 60 100 140 4 8 12 16 24 20 no heat sink single nonrepetitive pulse tc=25 c curves must be derated linearly wiht increase in temperature. * i (dc)max. c i (pulse)max. c 1 ms 10ms 100ms dc oper ation dc operation tc=25 c tc=25 c -0.1 -0.01 collector current i (a) c -0.03 -0.1 -0.3 -1 -3 -10 -0.3 -0.5 -1 -3 -5 ta=75 c ta=25 c ta=-25 c safe operating area ce collector-emitter voltage v (v) -0.01 c collector current i (a) -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 -20


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